Mantymaki, Miia; Hamalainen, Jani; Puukilainen, Esa; Sajavaara, Timo; Ritala, Mikko; Leskela, Markku published the artcile< Atomic layer deposition of LiF thin films from Lithd, Mg(thd)2, and TiF4 precursors>, Formula: C4H4N2O5, the main research area is atomic layer deposition lithium fluoride thin film precursor epitaxy; film adhesion.
Lithium fluoride is an interesting material because of its low refractive index and large band gap. Previously LiF thin films have been deposited mostly by phys. methods. In this study a new way of depositing thin films of LiF using at. layer deposition (ALD) is presented. Mg(thd)2(2,2,6,6-tetramethyl-3,5-heptanedionate) TiF4 and Lithd were used as precursors, and they produced crystalline LiF at a temperature range of 300-350 °C. The films were studied by UV-vis spectrometry, field emission SEM (FESEM), X-ray diffraction (XRD), at. force microscopy (AFM), time-of-flight elastic recoil detection anal. (ToF-ERDA), and energy dispersive X-ray spectroscopy (EDX). In addition, film adhesion was tested by a Scotch tape test. This method results in LiF films with a growth rate of approx. 1.4 Å per cycle. According to the ToF-ERDA measurements, the films are pure LiF with very small Mg and Ti impurities, the largest impurity being hydrogen with contents below 1 atom %.
Chemistry of Materials published new progress about Adhesive films. 2244-11-3 belongs to class pyrimidines, and the molecular formula is C4H4N2O5, Formula: C4H4N2O5.
Referemce:
Pyrimidine | C4H4N2 – PubChem,
Pyrimidine – Wikipedia